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N-Channel MOSFET, 3.2 A, 60 V, 4-Pin PG-SOT-89 Infineon BSS606NH6327XTSA1

RS Stock No.:
1107170P
Mfr. Part No.:
BSS606NH6327XTSA1
Manufacturer:
Infineon
Infineon

The image is for reference only, please refer to product details and specifications


On back order for despatch 23/12/2021, delivery within 3 working days
Add to Basket
units

Added

Price Each (Supplied on a Reel) Quantities below 150 on continuous strip

HK$4.864

unitsPer unit
250 - 450HK$4.864
500 +HK$4.789
Packaging Options:
RS Stock No.:
1107170P
Mfr. Part No.:
BSS606NH6327XTSA1
Manufacturer:
Infineon

Legislation and Compliance


Product Details

Infineon OptiMOS™3 Power MOSFETs, 60 to 80V





Specifications

AttributeValue
Channel TypeN
Maximum Continuous Drain Current3.2 A
Maximum Drain Source Voltage60 V
Package TypePG-SOT-89
Mounting TypeSurface Mount
Pin Count4
Maximum Drain Source Resistance90 mΩ
Channel ModeEnhancement
Maximum Gate Threshold Voltage2.3V
Minimum Gate Threshold Voltage1.3V
Maximum Power Dissipation1 W
Transistor ConfigurationSingle
Maximum Gate Source Voltage-20 V, +20 V
Number of Elements per Chip1
Width2.5mm
Height1.5mm
Typical Gate Charge @ Vgs3.7 nC @ 5 V
Length4.5mm
Maximum Operating Temperature+150 °C
Minimum Operating Temperature-55 °C
SeriesOptiMOS 3
Transistor MaterialSi
Forward Diode Voltage1.1V
On back order for despatch 23/12/2021, delivery within 3 working days
Add to Basket
units

Added

Price Each (Supplied on a Reel) Quantities below 150 on continuous strip

HK$4.864

unitsPer unit
250 - 450HK$4.864
500 +HK$4.789
Packaging Options: