N-Channel MOSFET, 3.2 A, 60 V, 4-Pin SOT-89 Infineon BSS606NH6327XTSA1
- RS Stock No.:
- 110-7170P
- Mfr. Part No.:
- BSS606NH6327XTSA1
- Manufacturer:
- Infineon
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On back order for despatch 21/03/2024, delivery within 3 working days
Price Each (Supplied on a Reel) Quantities below 150 on continuous strip
HK$4.335
| units | Per unit |
| 250 - 450 | HK$4.335 |
| 500 + | HK$4.268 |
Packaging Options:
- RS Stock No.:
- 110-7170P
- Mfr. Part No.:
- BSS606NH6327XTSA1
- Manufacturer:
- Infineon
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Infineon OptiMOS™3 Power MOSFETs, 60 to 80V
OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.
Fast switching MOSFET for SMPS
Optimized technology for DC/DC converters
Qualified according to JEDEC1) for target applications
N-channel, logic level
Excellent gate charge x R DS(on) product (FOM)
Very low on-resistance R DS(on)
Pb-free plating
Optimized technology for DC/DC converters
Qualified according to JEDEC1) for target applications
N-channel, logic level
Excellent gate charge x R DS(on) product (FOM)
Very low on-resistance R DS(on)
Pb-free plating
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Specifications
| Attribute | Value |
| Channel Type | N |
| Maximum Continuous Drain Current | 3.2 A |
| Maximum Drain Source Voltage | 60 V |
| Package Type | SOT-89 |
| Mounting Type | Surface Mount |
| Pin Count | 4 |
| Maximum Drain Source Resistance | 90 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 2.3V |
| Minimum Gate Threshold Voltage | 1.3V |
| Maximum Power Dissipation | 1 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Width | 2.5mm |
| Number of Elements per Chip | 1 |
| Transistor Material | Si |
| Length | 4.5mm |
| Maximum Operating Temperature | +150 °C |
| Typical Gate Charge @ Vgs | 3.7 nC @ 5 V |
| Forward Diode Voltage | 1.1V |
| Series | OptiMOS 3 |
| Height | 1.5mm |
| Minimum Operating Temperature | -55 °C |