Diodes Inc P-Channel MOSFET, 160 mA, 60 V, 3-Pin E-Line ZVP3306A
- RS Stock No.:
- 655-571
- Mfr. Part No.:
- ZVP3306A
- Manufacturer:
- DiodesZetex
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 pack of 5 units)*
HK$27.50
FREE delivery for orders over HK$250.00
In Stock
- 625 unit(s) ready to ship from another location
- Plus 3,885 unit(s) shipping from 12 December 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 20 | HK$5.50 | HK$27.50 |
| 25 - 95 | HK$5.34 | HK$26.70 |
| 100 - 245 | HK$5.22 | HK$26.10 |
| 250 - 495 | HK$5.08 | HK$25.40 |
| 500 + | HK$4.98 | HK$24.90 |
*price indicative
- RS Stock No.:
- 655-571
- Mfr. Part No.:
- ZVP3306A
- Manufacturer:
- DiodesZetex
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 160 mA | |
| Maximum Drain Source Voltage | 60 V | |
| Package Type | E-Line | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 14 Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 3.5V | |
| Maximum Power Dissipation | 625 mW | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Length | 4.77mm | |
| Number of Elements per Chip | 1 | |
| Width | 2.41mm | |
| Transistor Material | Si | |
| Maximum Operating Temperature | +150 °C | |
| Height | 4.01mm | |
| Minimum Operating Temperature | -55 °C | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type P | ||
Maximum Continuous Drain Current 160 mA | ||
Maximum Drain Source Voltage 60 V | ||
Package Type E-Line | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 14 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 3.5V | ||
Maximum Power Dissipation 625 mW | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Length 4.77mm | ||
Number of Elements per Chip 1 | ||
Width 2.41mm | ||
Transistor Material Si | ||
Maximum Operating Temperature +150 °C | ||
Height 4.01mm | ||
Minimum Operating Temperature -55 °C | ||
P-Channel MOSFET, 40V to 90V, Diodes Inc


For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.
MOSFET Transistors, Diodes Inc.
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