Vishay SI8818EDB Type N-Channel Single MOSFETs, 2.2 A, 30 V Enhancement, 4-Pin PowerPAK SI8818EDB-T2-E1

The image is for reference only, please refer to product details and specifications

Subtotal (1 reel of 3000 units)*

HK$3,579.00

Add to Basket
Select or type quantity
Stock information currently inaccessible - Please check back later
Units
Per unit
Per Reel*
3000 +HK$1.193HK$3,579.00

*price indicative

RS Stock No.:
653-090
Mfr. Part No.:
SI8818EDB-T2-E1
Manufacturer:
Vishay
Find similar products by selecting one or more attributes.
Select all

Brand

Vishay

Channel Type

Type N

Product Type

Single MOSFETs

Maximum Continuous Drain Current Id

2.2A

Maximum Drain Source Voltage Vds

30V

Series

SI8818EDB

Package Type

PowerPAK

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

0.143Ω

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

2.4nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

±12 V

Maximum Power Dissipation Pd

0.9W

Maximum Operating Temperature

150°C

Width

0.8 mm

Length

0.8mm

Height

0.39mm

Standards/Approvals

No

Automotive Standard

No

COO (Country of Origin):
CN
The Vishay N-channel MOSFET designed for ultra-compact, high-efficiency switching in space-constrained systems. It supports up to 30 V drain-source voltage. Packaged in MICRO FOOT 0.8 mm x 0.8 mm, it utilizes TrenchFET technology to deliver low RDS(on), fast switching, and excellent thermal performance.

Pb Free

Halogen free

RoHS compliant

Related links