onsemi UF3 Type N-Channel Single MOSFETs, 7.6 A, 1200 V Enhancement, 3-Pin TO-247-3 UF3C120400K3S
- RS Stock No.:
- 648-529
- Mfr. Part No.:
- UF3C120400K3S
- Manufacturer:
- onsemi
N
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Bulk discount available
Subtotal (1 bag of 2 units)*
HK$224.08
FREE delivery for orders over HK$250.00
In Stock
- 600 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Bag* |
|---|---|---|
| 2 - 8 | HK$112.04 | HK$224.08 |
| 10 + | HK$109.805 | HK$219.61 |
*price indicative
- RS Stock No.:
- 648-529
- Mfr. Part No.:
- UF3C120400K3S
- Manufacturer:
- onsemi
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | Single MOSFETs | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 7.6A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Series | UF3 | |
| Package Type | TO-247-3 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 515mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.5V | |
| Maximum Gate Source Voltage Vgs | 25 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 100W | |
| Typical Gate Charge Qg @ Vgs | 27nC | |
| Maximum Operating Temperature | 175°C | |
| Length | 20.96mm | |
| Width | 15.90 mm | |
| Standards/Approvals | RoHS, Pb-Free | |
| Height | 5.03mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type Single MOSFETs | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 7.6A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Series UF3 | ||
Package Type TO-247-3 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 515mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.5V | ||
Maximum Gate Source Voltage Vgs 25 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 100W | ||
Typical Gate Charge Qg @ Vgs 27nC | ||
Maximum Operating Temperature 175°C | ||
Length 20.96mm | ||
Width 15.90 mm | ||
Standards/Approvals RoHS, Pb-Free | ||
Height 5.03mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CH
The ON Semiconductor EliteSiC Cascode JFETs combine a normally-on SiC JFET with a Si MOSFET to create a normally-off device in a cascode circuit configuration, offering superior switching performance and reliability. Benefits include high efficiency, faster frequency, increased power density, reduced EMI, and smaller system size. These devices support standard gate drivers, simplifying the replacement of Si IGBTs and super junction devices. Ideal for switching inductive loads.
On-resistance RDS(on)
Maximum operating temperature of 175 °C
Excellent Reverse Recover
Low Gate Charge
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