Infineon ISG N-Channel Power Transistor, 139 A, 100 V Enhancement, 10-Pin PG-WHITFN-10-1 ISG0616N10NM5HSCATMA1
- RS Stock No.:
- 349-152
- Mfr. Part No.:
- ISG0616N10NM5HSCATMA1
- Manufacturer:
- Infineon
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HK$131.50
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Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 18 | HK$65.75 | HK$131.50 |
| 20 - 198 | HK$59.25 | HK$118.50 |
| 200 - 998 | HK$54.60 | HK$109.20 |
| 1000 - 1998 | HK$50.70 | HK$101.40 |
| 2000 + | HK$45.40 | HK$90.80 |
*price indicative
- RS Stock No.:
- 349-152
- Mfr. Part No.:
- ISG0616N10NM5HSCATMA1
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Product Type | Power Transistor | |
| Maximum Continuous Drain Current Id | 139A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | ISG | |
| Package Type | PG-WHITFN-10-1 | |
| Mount Type | Surface | |
| Pin Count | 10 | |
| Maximum Drain Source Resistance Rds | 4mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 167W | |
| Forward Voltage Vf | 1V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 52nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | IEC61249-2-21, RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Product Type Power Transistor | ||
Maximum Continuous Drain Current Id 139A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series ISG | ||
Package Type PG-WHITFN-10-1 | ||
Mount Type Surface | ||
Pin Count 10 | ||
Maximum Drain Source Resistance Rds 4mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 167W | ||
Forward Voltage Vf 1V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 52nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals IEC61249-2-21, RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- MY
Infineon ISG Series Power Transistor, 100V Drain Source Voltage, 139A Continuous Drain Current - ISG0616N10NM5HSCATMA1
This power transistor is a high-current N-channel enhancement MOSFET designed for surface-mount applications where efficient switching and thermal endurance are required. It operates across a wide temperature span and is intended for power-conversion and high-current switching contexts, offering a balance between low conduction losses and significant heat-handling capability.
Features and Benefits:
• 100V drain rating enables high-voltage switching capability
• 4mΩ Rds(on) reduces conduction losses under heavy load
• 139A continuous current supports high-current designs
• 167W power dissipation assists sustained thermal loads
• 52nC gate charge enables predictable switching performance
• Surface-mount PG-WHITFN-10-1 package simplifies automated assembly
• 4mΩ Rds(on) reduces conduction losses under heavy load
• 139A continuous current supports high-current designs
• 167W power dissipation assists sustained thermal loads
• 52nC gate charge enables predictable switching performance
• Surface-mount PG-WHITFN-10-1 package simplifies automated assembly
Applications
• Suitable for high-current DC-DC converters in power supplies
• Ideal for synchronous rectification in power management
• Used with motor-drive stages requiring high continuous current
• Can be used for server and telecom power distribution units
• Appropriate for industrial switching where elevated temperatures occur
• Ideal for synchronous rectification in power management
• Used with motor-drive stages requiring high continuous current
• Can be used for server and telecom power distribution units
• Appropriate for industrial switching where elevated temperatures occur
What gate-drive considerations are necessary for efficient switching?
The typical gate charge of 52nC at the specified gate voltage requires a driver capable of sourcing and sinking sufficient peak current to achieve the desired rise and fall times while managing switching losses.
How does the device handle thermal stress in compact layouts?
With 167W maximum dissipation, the thermal layout should include adequate copper area and thermal vias beneath the package to spread heat and maintain junction temperatures within limits.
What voltage limits must be observed to avoid device damage?
The maximum drain-source voltage is 100V and the gate-source voltage must not exceed 20V to prevent avalanche or gate-oxide stress.
How robust is the device for deployments in extreme ambient conditions?
It operates across a temperature range from -55°C up to 175°C, allowing use in environments with severe temperature variation.
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