STMicroelectronics PD5 Type N-Channel MOSFET, 2.5 A, 65 V Enhancement, 10-Pin PowerSO-10RF PD57018-E
- RS Stock No.:
- 330-355P
- Mfr. Part No.:
- PD57018-E
- Manufacturer:
- STMicroelectronics
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal 10 units (supplied in a tube)*
HK$3,717.00
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Temporarily out of stock
- Shipping from 27 July 2026
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Units | Per unit |
|---|---|
| 10 - 99 | HK$371.70 |
| 100 + | HK$342.80 |
*price indicative
- RS Stock No.:
- 330-355P
- Mfr. Part No.:
- PD57018-E
- Manufacturer:
- STMicroelectronics
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 2.5A | |
| Maximum Drain Source Voltage Vds | 65V | |
| Series | PD5 | |
| Package Type | PowerSO-10RF | |
| Mount Type | Surface | |
| Pin Count | 10 | |
| Maximum Drain Source Resistance Rds | 0.76Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Maximum Power Dissipation Pd | 31.7W | |
| Minimum Operating Temperature | 65°C | |
| Maximum Operating Temperature | 165°C | |
| Width | 9.6 mm | |
| Length | 14.35mm | |
| Height | 3.6mm | |
| Standards/Approvals | J-STD-020B | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 2.5A | ||
Maximum Drain Source Voltage Vds 65V | ||
Series PD5 | ||
Package Type PowerSO-10RF | ||
Mount Type Surface | ||
Pin Count 10 | ||
Maximum Drain Source Resistance Rds 0.76Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Maximum Power Dissipation Pd 31.7W | ||
Minimum Operating Temperature 65°C | ||
Maximum Operating Temperature 165°C | ||
Width 9.6 mm | ||
Length 14.35mm | ||
Height 3.6mm | ||
Standards/Approvals J-STD-020B | ||
Automotive Standard No | ||
- COO (Country of Origin):
- MY
The STMicroelectronics RF POWER transistor is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies of up to 1 GHz. The device boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-10RF. Device’s superior linearity performance makes it an ideal solution for base station applications. The PowerSO-10 plastic package, designed to offer high reliability, is the first ST JEDEC approved, high power SMD package. It has been specially optimized for RF needs and offers excellent RF performance and ease of assembly. Mounting recommendations are available in www.st.com/rf/ (look for application note AN1294).
Excellent thermal stability
Common source configuration
New RF plastic package