onsemi NTH Type N-Channel MOSFET, 70 A, 650 V Enhancement, 3-Pin TO-247-3L NTHL023N065M3S
- RS Stock No.:
- 277-044
- Mfr. Part No.:
- NTHL023N065M3S
- Manufacturer:
- onsemi
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 unit)*
HK$76.40
Add 4 units to get free delivery
Temporarily out of stock
- Shipping from 13 July 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 1 - 9 | HK$76.40 |
| 10 - 99 | HK$68.76 |
| 100 - 499 | HK$63.44 |
| 500 - 999 | HK$58.79 |
| 1000 + | HK$47.72 |
*price indicative
- RS Stock No.:
- 277-044
- Mfr. Part No.:
- NTHL023N065M3S
- Manufacturer:
- onsemi
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 70A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-247-3L | |
| Series | NTH | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 23mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 263W | |
| Typical Gate Charge Qg @ Vgs | 69nC | |
| Forward Voltage Vf | 6V | |
| Maximum Gate Source Voltage Vgs | 22 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS with exemption 7a, Halide Free, Pb-Free 2LI | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 70A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-247-3L | ||
Series NTH | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 23mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 263W | ||
Typical Gate Charge Qg @ Vgs 69nC | ||
Forward Voltage Vf 6V | ||
Maximum Gate Source Voltage Vgs 22 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS with exemption 7a, Halide Free, Pb-Free 2LI | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The ON Semiconductor SiC MOSFETs is optimized for fast switching applications. Planar technology works reliably with negative gate voltage drive and turn off spikes on the gate. This has optimum performance when driven with 18V gate drive but also works well with 15V gate drive.
Ultra low gate charge
High speed switching with low capacitance
100% avalanche tested
Device is Halide Free and RoHS compliant
Related links
- onsemi NTH Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247
- onsemi NTH Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247 NTHL082N65S3F
- onsemi NTH Type N-Channel MOSFET 650 V Enhancement, 4-Pin TO-247-4L NTH4L023N065M3S
- onsemi NTH Type N-Channel MOSFET 650 V N, 4-Pin TO-247-4L NTH4L032N065M3S
- onsemi NTH Type N-Channel MOSFET 650 V N, 3-Pin TO-247-4L NTHL032N065M3S
- onsemi NTH Type N-Channel MOSFET 1200 V Enhancement, 3-Pin TO-247
- onsemi NTH Type N-Channel MOSFET 1200 V Enhancement, 3-Pin TO-247
- onsemi NTH Type N-Channel MOSFET & Diode 1200 V Enhancement, 3-Pin TO-247
