DiodesZetex Dual ZXMS6008DN8 2 Type N-Channel MOSFET, 0.9 A, 60 V Enhancement, 8-Pin SO-8 ZXMS6008DN8-13

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Subtotal 10 units (supplied on a continuous strip)*

HK$44.00

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Units
Per unit
10 - 99HK$4.40
100 - 499HK$4.00
500 - 999HK$3.70
1000 +HK$3.30

*price indicative

Packaging Options:
RS Stock No.:
216-349P
Mfr. Part No.:
ZXMS6008DN8-13
Manufacturer:
DiodesZetex
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Brand

DiodesZetex

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

0.9A

Maximum Drain Source Voltage Vds

60V

Series

ZXMS6008DN8

Package Type

SO-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

800mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-40°C

Maximum Power Dissipation Pd

2.13W

Maximum Operating Temperature

150°C

Transistor Configuration

Dual

Length

4.9mm

Standards/Approvals

JEDEC, UL 94V-0, RoHS

Height

1.45mm

Number of Elements per Chip

2

Automotive Standard

AEC-Q100

COO (Country of Origin):
CN
The DiodesZetex MOSFET is a dual self protected low-side IntelliFET MOSFET with logic level input. It integrates over temperature, overcurrent, overvoltage and ESD protected logic-level functionality. It is Ideal as a general purpose switch driven from 3.3V or 5V microcontrollers in harsh environments where standard MOSFETs are not rugged enough.

Compact high power dissipation package

Low input current

Short circuit protection with auto restart

Overvoltage protection

Thermal shutdown with auto restart

Overcurrent protection

Input ESD protection

High continuous current rating