N-Channel MOSFET, 66 A, 500 V, 4-Pin SOT-227 IXYS IXFN80N50P

RS Stock No.:: 194-029P
Mfr. Part No.:: IXFN80N50P
Manufacturer:: IXYS

N-Channel MOSFET, 66 A, 500 V, 4-Pin SOT-227 IXYS IXFN80N50P

51 In stock for delivery within 3 working days

Price Each (Supplied in a Tube)

HK$266.65

Units	Per unit
3 +	HK$266.65

RS Stock No.:: 194-029P
Mfr. Part No.:: IXFN80N50P
Manufacturer:: IXYS

Datasheet
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	66 A
Maximum Drain Source Voltage	500 V
Package Type	SOT-227B
Series	HiperFET, Polar
Mounting Type	Screw Mount
Pin Count	4
Maximum Drain Source Resistance	65 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	5V
Maximum Power Dissipation	700 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-30 V, +30 V
Transistor Material	Si
Width	25.07mm
Typical Gate Charge @ Vgs	195 nC @ 10 V
Length	38.2mm
Number of Elements per Chip	1
Maximum Operating Temperature	+150 °C
Minimum Operating Temperature	-55 °C
Height	9.6mm

N-Channel MOSFET, 66 A, 500 V, 4-Pin SOT-227 IXYS IXFN80N50P

N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series