STMicroelectronics SuperMESH Type N-Channel MOSFET, 300 mA, 600 V Enhancement, 4-Pin SOT-223 STN1NK60Z
- RS Stock No.:
- 151-928
- Distrelec Article No.:
- 304-37-475
- Mfr. Part No.:
- STN1NK60Z
- Manufacturer:
- STMicroelectronics
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Subtotal (1 tape of 20 units)*
HK$58.70
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In Stock
- 3,960 unit(s) ready to ship from another location
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Units | Per unit | Per Tape* |
|---|---|---|
| 20 - 180 | HK$2.935 | HK$58.70 |
| 200 - 480 | HK$2.785 | HK$55.70 |
| 500 - 980 | HK$2.585 | HK$51.70 |
| 1000 - 1980 | HK$2.375 | HK$47.50 |
| 2000 + | HK$2.285 | HK$45.70 |
*price indicative
- RS Stock No.:
- 151-928
- Distrelec Article No.:
- 304-37-475
- Mfr. Part No.:
- STN1NK60Z
- Manufacturer:
- STMicroelectronics
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 300mA | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | SuperMESH | |
| Package Type | SOT-223 | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 15Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | ±30 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 4.9nC | |
| Forward Voltage Vf | 1.6V | |
| Maximum Operating Temperature | 150°C | |
| Width | 3.7 mm | |
| Length | 6.7mm | |
| Height | 1.8mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 300mA | ||
Maximum Drain Source Voltage Vds 600V | ||
Series SuperMESH | ||
Package Type SOT-223 | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 15Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs ±30 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 4.9nC | ||
Forward Voltage Vf 1.6V | ||
Maximum Operating Temperature 150°C | ||
Width 3.7 mm | ||
Length 6.7mm | ||
Height 1.8mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The STMicroelectronics Power MOSFET developed using Super MESH technology, achieved through optimization of well established strip based Power MESH layout. In addition to a significant reduction in on resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications.
100% avalanche tested
Gate charge minimized
SD improved capability
Zener protected
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