STMicroelectronics STripFET F6 Type P-Channel MOSFET, 35 A, 60 V Enhancement, 3-Pin TO-252 STD35P6LLF6

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HK$57.80

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Per Tape*
5 - 45HK$11.56HK$57.80
50 - 95HK$10.98HK$54.90
100 - 495HK$10.20HK$51.00
500 - 995HK$9.36HK$46.80
1000 +HK$9.02HK$45.10

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Packaging Options:
RS Stock No.:
151-912
Mfr. Part No.:
STD35P6LLF6
Manufacturer:
STMicroelectronics
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Brand

STMicroelectronics

Channel Type

Type P

Product Type

MOSFET

Maximum Continuous Drain Current Id

35A

Maximum Drain Source Voltage Vds

60V

Series

STripFET F6

Package Type

TO-252

Pin Count

3

Maximum Drain Source Resistance Rds

0.028Ω

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

30nC

Maximum Power Dissipation Pd

70W

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

1.5V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

No

COO (Country of Origin):
CN
The STMicroelectronics P-channel Power MOSFET, developed using the STripFET F6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages.

Very low on-resistance

Very low gate charge

High avalanche ruggedness

Low gate drive power loss

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