STMicroelectronics SuperMESH Type N-Channel MOSFET, 2.4 A, 600 V Enhancement, 3-Pin TO-252 STD3NK60ZT4
- RS Stock No.:
- 151-418
- Mfr. Part No.:
- STD3NK60ZT4
- Manufacturer:
- STMicroelectronics
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 tape of 20 units)*
HK$96.70
FREE delivery for orders over HK$250.00
In Stock
- Plus 2,420 unit(s) shipping from 26 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tape* |
|---|---|---|
| 20 - 180 | HK$4.835 | HK$96.70 |
| 200 - 480 | HK$4.595 | HK$91.90 |
| 500 - 980 | HK$4.255 | HK$85.10 |
| 1000 - 1980 | HK$3.915 | HK$78.30 |
| 2000 + | HK$3.775 | HK$75.50 |
*price indicative
- RS Stock No.:
- 151-418
- Mfr. Part No.:
- STD3NK60ZT4
- Manufacturer:
- STMicroelectronics
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 2.4A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-252 | |
| Series | SuperMESH | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3.6Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 11.8nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | ±30 V | |
| Forward Voltage Vf | 1.6V | |
| Maximum Operating Temperature | 150°C | |
| Width | 6.6 mm | |
| Standards/Approvals | RoHS | |
| Height | 2.4mm | |
| Length | 10.1mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 2.4A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-252 | ||
Series SuperMESH | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3.6Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 11.8nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs ±30 V | ||
Forward Voltage Vf 1.6V | ||
Maximum Operating Temperature 150°C | ||
Width 6.6 mm | ||
Standards/Approvals RoHS | ||
Height 2.4mm | ||
Length 10.1mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The STMicroelectronics Power MOSFET developed using the Super MESH technology, an optimization of the well established Power MESH. In addition to a significant reduction in on resistance, these devices are designed to ensure a high level of dv/dt capability for the most demanding applications.
100% avalanche tested
Gate charge minimized
Very low intrinsic capacitance
Zener protected
Related links
- STMicroelectronics SuperMESH Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-252 STD3NK60ZT4
- STMicroelectronics SuperMESH Type N-Channel MOSFET 600 V Enhancement, 3-Pin IPAK
- STMicroelectronics SuperMESH Type N-Channel MOSFET 600 V Enhancement, 3-Pin IPAK STD3NK60Z-1
- STMicroelectronics SuperMESH Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-252 STD2HNK60Z
- STMicroelectronics SuperMESH Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-252 STD4NK60ZT4
- STMicroelectronics SuperMESH Type N-Channel MOSFET 1000 V Enhancement, 3-Pin TO-252 STD2NK100Z
- STMicroelectronics SuperMESH Type N-Channel MOSFET 400 V Enhancement, 3-Pin TO-252 STD5NK40ZT4
- STMicroelectronics SuperMESH Type N-Channel MOSFET 500 V Enhancement, 3-Pin TO-252 STD5NK50ZT4