ON Semiconductor NGTB30N135IHR1WG IGBT, 60 A 1350 V, 3-Pin TO-247

Product overview and Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
Product Details

IGBT Discretes, ON Semiconductor

Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications.

IGBT Discretes, ON Semiconductor

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Specifications
Attribute Value
Maximum Continuous Collector Current 60 A
Maximum Collector Emitter Voltage 1350 V
Maximum Gate Emitter Voltage ±20V
Maximum Power Dissipation 394 W
Package Type TO-247
Mounting Type Through Hole
Channel Type N
Pin Count 3
Transistor Configuration Single
Length 16.25mm
Width 5.3mm
Height 21.4mm
Dimensions 16.25 x 5.3 x 21.4mm
Gate Capacitance 5530pF
Minimum Operating Temperature -40 °C
Maximum Operating Temperature +175 °C
62 In stock for delivery within 3 working days
Price Each (In a Pack of 2)
HK$ 23.55
(exc. GST)
units
Per unit
Per Pack*
2 - 8
HK$23.55
HK$47.10
10 - 38
HK$22.37
HK$44.74
40 - 98
HK$21.255
HK$42.51
100 - 298
HK$19.735
HK$39.47
300 +
HK$18.445
HK$36.89
*price indicative
Packaging Options:
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