STMicroelectronics STGW30NC60KD IGBT, 60 A 600 V, 3-Pin TO-247, Through Hole

The image is for reference only, please refer to product details and specifications

View all IGBTs
Bulk discount available

Subtotal (1 pack of 5 units)*

HK$280.60

Add to Basket
Select or type quantity
In Stock
  • 5 unit(s) ready to ship from another location
  • Plus 355 unit(s) shipping from 03 February 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Pack*
5 - 5HK$56.12HK$280.60
10 - 10HK$54.72HK$273.60
15 +HK$53.90HK$269.50

*price indicative

Packaging Options:
RS Stock No.:
877-2905
Mfr. Part No.:
STGW30NC60KD
Manufacturer:
STMicroelectronics
Find similar products by selecting one or more attributes.
Select all

Brand

STMicroelectronics

Maximum Continuous Collector Current

60 A

Maximum Collector Emitter Voltage

600 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

200 W

Package Type

TO-247

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Transistor Configuration

Single

Dimensions

15.75 x 5.15 x 24.45mm

Energy Rating

1435mJ

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Gate Capacitance

2170pF

COO (Country of Origin):
CN

IGBT Discretes, STMicroelectronics


For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.



IGBT Discretes & Modules, STMicroelectronics


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Related links