STMicroelectronics STGW30NC60KD, Type N-Channel IGBT, 60 A 600 V, 3-Pin TO-247, Through Hole

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Per Pack*
5 - 5HK$56.12HK$280.60
10 - 10HK$54.72HK$273.60
15 +HK$53.90HK$269.50

*price indicative

Packaging Options:
RS Stock No.:
877-2905
Mfr. Part No.:
STGW30NC60KD
Manufacturer:
STMicroelectronics
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Brand

STMicroelectronics

Product Type

IGBT

Maximum Continuous Collector Current Ic

60A

Maximum Collector Emitter Voltage Vceo

600V

Maximum Power Dissipation Pd

200W

Package Type

TO-247

Mount Type

Through Hole

Channel Type

Type N

Pin Count

3

Switching Speed

29ns

Maximum Gate Emitter Voltage VGEO

±20 V

Maximum Collector Emitter Saturation Voltage VceSAT

2.7V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

JEDEC Standard JESD97

Series

Rugged

Height

20.15mm

Energy Rating

1435mJ

Automotive Standard

No

COO (Country of Origin):
CN

IGBT Discretes, STMicroelectronics


IGBT Discretes & Modules, STMicroelectronics


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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