ON Semiconductor FGB3040CS IGBT, 21 A 430 V, 6-Pin D2PAK (TO-263)

Product overview and Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
Product Details

Automotive Ignition IGBT, Fairchild Semiconductor

These EcoSPARK IGBT devices are optimised for driving automotive ignition coils. They have been stress tested and meet the AEC-Q101 standard.

Features

• Logic-level gate drive
• ESD Protection
• Applications: Automotive ignition coil driver circuits, Coil-on-Plug applications

RS Product Codes

864-8802 FGB3040CS 400V 20A D2PAK 864-8805 FGB3040G2_F085 400V 25A DPAK-2
807-0767 FGD3040G2_F085 400V 25A DPAK
864-8880 FGI3040G2_F085 400V 25A I2PAK
864-8899 FGP3040G2_F085 400V 25A TO220
864-8809 FGB3245G2_F085 450V 23A D2PAK-2
864-8827 FGD3245G2_F085 450V 23A DPAK
807-0776 FGD3440G2_F085 400V 25A DPAK
864-8818 FGB3440G2_F085 400V 25A D2PAK-2
864-8893 FGP3440G2_F085 400V 25A TO220
807-8751 ISL9V5036P3_F085 360V 31A TO220
862-9369 ISL9V5045S3ST_F085 450V 43A D2PAK

Note

Quoted current ratings apply when junction temperature Tc = +110°C.

Standards

AEC-Q101

IGBT Discretes & Modules, Fairchild Semiconductor

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Specifications
Attribute Value
Maximum Continuous Collector Current 21 A
Maximum Collector Emitter Voltage 430 V
Maximum Gate Emitter Voltage ±10V
Maximum Power Dissipation 150 W
Package Type D2PAK (TO-263)
Mounting Type Surface Mount
Channel Type N
Pin Count 6
Transistor Configuration Single
Length 10.1mm
Width 9.4mm
Height 4.7mm
Dimensions 10.1 x 9.4 x 4.7mm
Maximum Operating Temperature +175 °C
Minimum Operating Temperature -40 °C
Discontinued product