IXYS IXYH30N120C3D1 IGBT, 66 A 1200 V, 3-Pin TO-247

  • RS Stock No. 808-0271
  • Mfr. Part No. IXYH30N120C3D1
  • Manufacturer IXYS
Product overview and Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
Product Details

IGBT Discretes, IXYS XPT series

The XPT™ range of discrete IGBTs from IXYS feature Extreme-light Punch-Through thin wafer technology, resulting in reduced thermal resistance and lower energy losses. These devices offer fast switching times with low tail current, and are available in a variety of industry standard and proprietary packages.

High power density and low VCE(sat)
Square Reverse Bias Safe Operating Areas (RBSOA) up to rated breakdown voltage
Short circuit capability for 10usec
Positive on-state voltage temperature coefficient
Optional co-packed Sonic-FRD™ or HiPerFRED™ diodes
International standard and proprietary high voltage packages

IGBT Discretes & Modules, IXYS

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Specifications
Attribute Value
Maximum Continuous Collector Current 66 A
Maximum Collector Emitter Voltage 1200 V
Maximum Gate Emitter Voltage ±20V
Maximum Power Dissipation 416 W
Package Type TO-247
Mounting Type Through Hole
Channel Type N
Pin Count 3
Switching Speed 50kHz
Transistor Configuration Single
Length 16.26mm
Width 5.3mm
Height 21.46mm
Dimensions 16.26 x 5.3 x 21.46mm
Minimum Operating Temperature -55 °C
Maximum Operating Temperature +150 °C
On back order for despatch 05/02/2020, delivery within 3 working days
Price Each
HK$ 81.30
(exc. GST)
units
Per unit
1 - 9
HK$81.30
10 - 19
HK$80.48
20 - 49
HK$68.44
50 - 249
HK$67.73
250 +
HK$67.02
Packaging Options:
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