onsemi HGT1S10N120BNST, Type N-Channel IGBT, 35 A 1200 V, 3-Pin TO-263, Surface

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HK$66.30

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2 - 198HK$33.15HK$66.30
200 - 398HK$32.35HK$64.70
400 +HK$31.85HK$63.70

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Packaging Options:
RS Stock No.:
807-6660
Mfr. Part No.:
HGT1S10N120BNST
Manufacturer:
onsemi
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Brand

onsemi

Maximum Continuous Collector Current Ic

35A

Product Type

IGBT

Maximum Collector Emitter Voltage Vceo

1200V

Maximum Power Dissipation Pd

298W

Package Type

TO-263

Mount Type

Surface

Channel Type

Type N

Pin Count

3

Switching Speed

1MHz

Minimum Operating Temperature

-55°C

Maximum Collector Emitter Saturation Voltage VceSAT

2.45V

Maximum Gate Emitter Voltage VGEO

±20 V

Maximum Operating Temperature

150°C

Series

NPT

Standards/Approvals

RoHS

Automotive Standard

No

Discrete IGBTs, 1000V and over, Fairchild Semiconductor


IGBT Discretes & Modules, Fairchild Semiconductor


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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