Toshiba GT50JR21, N-Channel IGBT, 50 A 600 V, 3-Pin TO-3P, Through Hole, Through Hole
- RS Stock No.:
- 796-5061
- Mfr. Part No.:
- GT50JR21
- Manufacturer:
- Toshiba
The image is for reference only, please refer to product details and specifications
Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
- RS Stock No.:
- 796-5061
- Mfr. Part No.:
- GT50JR21
- Manufacturer:
- Toshiba
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Toshiba | |
| Channel Type | N | |
| Product Type | IGBT | |
| Maximum Continuous Collector Current (Ic) | 50 A | |
| Maximum Collector Emitter Voltage (Vceo) | 600 V | |
| Pin Count | 3 | |
| Package Type | TO-3P | |
| Mount Type | Through Hole, Through Hole | |
| Automotive Standard | No | |
| Maximum Collector Emitter Saturation Voltage (Vce(SAT)) | 2 V | |
| Maximum Gate Emitter Voltage (VGEO) | 25 V | |
| Maximum Operating Temperature | 175 °C | |
| Maximum Power Dissipation (Pd) | 230 W | |
| Minimum Operating Temperature | -55 °C | |
| Standards/Approvals | RoHS | |
| Select all | ||
|---|---|---|
Brand Toshiba | ||
Channel Type N | ||
Product Type IGBT | ||
Maximum Continuous Collector Current (Ic) 50 A | ||
Maximum Collector Emitter Voltage (Vceo) 600 V | ||
Pin Count 3 | ||
Package Type TO-3P | ||
Mount Type Through Hole, Through Hole | ||
Automotive Standard No | ||
Maximum Collector Emitter Saturation Voltage (Vce(SAT)) 2 V | ||
Maximum Gate Emitter Voltage (VGEO) 25 V | ||
Maximum Operating Temperature 175 °C | ||
Maximum Power Dissipation (Pd) 230 W | ||
Minimum Operating Temperature -55 °C | ||
Standards/Approvals RoHS | ||
IGBT Discretes, Toshiba
IGBT Discretes & Modules, Toshiba
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Related links
- Toshiba GT50JR21 Type N-Channel IGBT 3-Pin TO-3P Through Hole
- Toshiba 50 A 600 V Through Hole
- Toshiba GT50JR22 50 A 600 V Through Hole
- Toshiba 20 A 600 V Through Hole
- STMicroelectronics 50 A 650 V Through Hole
- ROHM RGW00TS65HRC11 50 A 650 V Through Hole
- ROHM RGS50TSX2DGC11 50 A 1200 V Through Hole
- Infineon IKW50N120CH7XKSA1 50 A 1200 V Through Hole