STMicroelectronics STGW80H65DFB IGBT, 120 A 650 V, 3-Pin TO-247, Through Hole
- RS Stock No.:
- 792-5814
- Mfr. Part No.:
- STGW80H65DFB
- Manufacturer:
- STMicroelectronics
On back order for despatch 20/05/2025, delivery within 3 working days
Added
Price Each
HK$55.56
| Units | Per unit |
| 1 - 7 | HK$55.56 |
| 8 - 14 | HK$54.16 |
| 15 + | HK$53.33 |
- RS Stock No.:
- 792-5814
- Mfr. Part No.:
- STGW80H65DFB
- Manufacturer:
- STMicroelectronics
Product overview and Technical data sheets
Legislation and Compliance
Product Details
IGBT Discretes, STMicroelectronics
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specifications
Attribute | Value |
|---|---|
| Maximum Continuous Collector Current | 120 A |
| Maximum Collector Emitter Voltage | 650 V |
| Maximum Gate Emitter Voltage | ±20V |
| Maximum Power Dissipation | 469 W |
| Package Type | TO-247 |
| Mounting Type | Through Hole |
| Channel Type | N |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Dimensions | 15.75 x 5.15 x 20.15mm |
| Maximum Operating Temperature | +175 °C |
| Minimum Operating Temperature | -55 °C |