- RS Stock No.:
- 791-9374
- Mfr. Part No.:
- STGW20V60DF
- Manufacturer:
- STMicroelectronics
415 In stock for delivery within 3 working days
Added
Price Each (In a Pack of 5)
HK$32.01
Units | Per unit | Per Pack* |
5 - 5 | HK$32.01 | HK$160.05 |
10 - 10 | HK$31.212 | HK$156.06 |
15 + | HK$30.732 | HK$153.66 |
*price indicative |
- RS Stock No.:
- 791-9374
- Mfr. Part No.:
- STGW20V60DF
- Manufacturer:
- STMicroelectronics
Product overview and Technical data sheets
Legislation and Compliance
Product Details
IGBT Discretes, STMicroelectronics
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specifications
Attribute | Value |
---|---|
Maximum Continuous Collector Current | 40 A |
Maximum Collector Emitter Voltage | 600 V |
Maximum Gate Emitter Voltage | ±20V |
Maximum Power Dissipation | 167 W |
Package Type | TO-247 |
Mounting Type | Through Hole |
Channel Type | N |
Pin Count | 3 |
Switching Speed | 1MHz |
Transistor Configuration | Single |
Dimensions | 15.75 x 5.15 x 20.15mm |
Minimum Operating Temperature | -55 °C |
Maximum Operating Temperature | +175 °C |