Infineon IRGP4263-EPBF IGBT, 90 A 650 V, 3-Pin TO-247AD

  • RS Stock No. 784-9035
  • Mfr. Part No. IRGP4263-EPBF
  • Manufacturer Infineon
Product overview and Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
COO (Country of Origin): MX
Product Details

Single IGBT over 21A, Infineon

Optimised IGBTs designed for medium frequency applications with fast response and provide the user with the highest efficiency available. Utilising FRED diodes optimised to provide the best performance with IGBT's

IGBT Transistors, International Rectifier

International Rectifier offers an extensive IGBT (Insulated-Gate Bipolar Transistor) portfolio ranging from 300V to 1200V based on various technologies that minimize switching and conduction losses to increase efficiency, reduce thermal problems and improve power density. The company also offers a broad range of IGBT dies designed specifically for medium- to high-power modules. For modules that demand the highest reliability, solderable front metal (SFM) dies can be employed to eliminate bond wires and allow double-sided cooling for improved thermal performance, reliability and efficiency.

Specifications
Attribute Value
Maximum Continuous Collector Current 90 A
Maximum Collector Emitter Voltage 650 V
Maximum Gate Emitter Voltage ±20V
Maximum Power Dissipation 300 W
Package Type TO-247AD
Mounting Type Through Hole
Channel Type N
Pin Count 3
Switching Speed 30kHz
Transistor Configuration Single
Length 15.87mm
Width 5.13mm
Height 20.7mm
Dimensions 15.87 x 5.13 x 20.7mm
Minimum Operating Temperature -40 °C
Maximum Operating Temperature +175 °C
30 In stock for delivery within 3 working days
Price Each
HK$ 46.57
(exc. GST)
units
Per unit
1 - 24
HK$46.57
25 - 49
HK$39.10
50 - 99
HK$38.34
100 - 249
HK$37.58
250 +
HK$36.82
Packaging Options:
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