Toshiba GT60M324(Q) IGBT, 60 A 900 V, 3-Pin TO-3PN

  • RS Stock No. 756-0565
  • Mfr. Part No. GT60M324(Q)
  • Manufacturer Toshiba
Product overview and Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
Product Details

IGBT Discretes, Toshiba

IGBT Discretes & Modules, Toshiba

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Attribute Value
Maximum Continuous Collector Current 60 A
Maximum Collector Emitter Voltage 900 V
Maximum Gate Emitter Voltage ±25V
Maximum Power Dissipation 254 W
Package Type TO-3PN
Mounting Type Through Hole
Channel Type N
Pin Count 3
Switching Speed 0.11µs
Transistor Configuration Single
Length 20mm
Width 15.9mm
Height 4.8mm
Dimensions 20 x 15.9 x 4.8mm
Maximum Operating Temperature +175 °C
Discontinued product