Infineon IKW15T120FKSA1 IGBT, 30 A 1200 V, 3-Pin TO-247

  • RS Stock No. 754-5399
  • Mfr. Part No. IKW15T120FKSA1
  • Manufacturer Infineon
Product overview and Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
Product Details

Infineon TrenchStop IGBT Transistors, 1100 to 1600V

A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 1100 to 1600V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.

• Collector-emitter voltage range 1100 to 1600V
• Very low VCEsat
• Low turn-off losses
• Short tail current
• Low EMI
• Maximum junction temperature 175°C

IGBT Discretes & Modules, Infineon

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Specifications
Attribute Value
Maximum Continuous Collector Current 30 A
Maximum Collector Emitter Voltage 1200 V
Maximum Gate Emitter Voltage ±20V
Maximum Power Dissipation 110 W
Package Type TO-247
Mounting Type Through Hole
Pin Count 3
Transistor Configuration Single
Length 16.03mm
Width 21.1mm
Height 5.16mm
Dimensions 16.03 x 21.1 x 5.16mm
Minimum Operating Temperature -40 °C
Maximum Operating Temperature +150 °C
35 In stock for delivery within 3 working days
Price Each
HK$ 50.30
(exc. GST)
units
Per unit
1 - 24
HK$50.30
25 - 99
HK$40.36
100 - 239
HK$39.14
240 - 479
HK$38.32
480 +
HK$37.56
Packaging Options:
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