- RS Stock No.:
- 664-1124P
- Mfr. Part No.:
- TIG052TS-TL-E
- Manufacturer:
- Sanyo
Available for back order.
Added
Price Each (Supplied on a Reel) Quantities below 150 on continuous strip
HK$4.11
Units | Per unit |
25 - 195 | HK$4.11 |
200 - 495 | HK$4.10 |
500 - 995 | HK$4.09 |
1000 + | HK$4.00 |
- RS Stock No.:
- 664-1124P
- Mfr. Part No.:
- TIG052TS-TL-E
- Manufacturer:
- Sanyo
Product overview and Technical data sheets
Legislation and Compliance
- COO (Country of Origin):
- JP
Product Details
IGBT Discrete, Sanyo
IGBT Discretes & Modules
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specifications
Attribute | Value |
---|---|
Maximum Continuous Collector Current | 150 A |
Maximum Collector Emitter Voltage | 400 V |
Maximum Gate Emitter Voltage | ±6V |
Package Type | TSSOP |
Mounting Type | Surface Mount |
Channel Type | N |
Pin Count | 8 |
Dimensions | 3 x 4.5 x 1mm |
Maximum Operating Temperature | +150 °C |