Infineon Dual IGBT, 600 A 1200 V AG-PRIME2, Chassis

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Subtotal (1 tray of 3 units)*

HK$10,643.901

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Units
Per unit
Per Tray*
3 +HK$3,547.967HK$10,643.90

*price indicative

RS Stock No.:
260-8889
Mfr. Part No.:
FF600R12IE4BOSA1
Manufacturer:
Infineon
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Brand

Infineon

Maximum Continuous Collector Current Ic

600A

Product Type

IGBT

Maximum Collector Emitter Voltage Vceo

1200V

Maximum Power Dissipation Pd

3.35kW

Number of Transistors

2

Configuration

Dual

Package Type

AG-PRIME2

Mount Type

Chassis

Minimum Operating Temperature

-40°C

Maximum Gate Emitter Voltage VGEO

20 V

Maximum Collector Emitter Saturation Voltage VceSAT

2.1V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Automotive Standard

No

The Infineon PrimePACK 2 1200 V, 600 A half-bridge dual IGBT module with TRENCHSTOP IGBT4, emitter controlled 4 diode, NTC and fast switching chip. High short circuit capability, self limiting short circuit current, VCEsat with positive temperature coefficient.

Extended operation temperature

High DC stability

High power density

Standardized housing

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