Bourns BIDW50N65T Single Diode IGBT, 50 A 650 V TO-247

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Subtotal (1 pack of 2 units)*

HK$66.10

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Units
Per unit
Per Pack*
2 - 8HK$33.05HK$66.10
10 - 48HK$29.75HK$59.50
50 - 98HK$28.00HK$56.00
100 - 248HK$27.15HK$54.30
250 +HK$26.35HK$52.70

*price indicative

Packaging Options:
RS Stock No.:
253-3509
Mfr. Part No.:
BIDW50N65T
Manufacturer:
Bourns
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Brand

Bourns

Maximum Continuous Collector Current

50 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

416 W

Number of Transistors

1

Configuration

Single Diode

Package Type

TO-247

The Bourns IGBT device combines technology from a MOS gate and a bipolar transistor for an optimum component for high voltage and high current applications. This device uses Trench-Gate Field-Stop technology providing greater control of dynamic characteristics with a lower Collector-Emitter Saturation Voltage (VCE(sat)) and fewer switching losses. In addition, this structure provides a lower thermal resistance R(th).

650 V, 50 A, Low Collector-Emitter Saturation Voltage (VCE(sat))
Trench-Gate Field-Stop technology
Optimized for conduction
RoHS compliant

For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.


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