Infineon IKW50N65RH5XKSA1 Single IGBT Transistor Module, 50 A 650 V PG-TO247-3

Bulk discount available

Subtotal (1 tube of 30 units)*

HK$1,026.00

Add to Basket
Select or type quantity
In Stock
  • Plus 210 unit(s) shipping from 26 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Tube*
30 - 30HK$34.20HK$1,026.00
60 - 60HK$30.78HK$923.40
90 +HK$29.857HK$895.71

*price indicative

RS Stock No.:
249-6940
Mfr. Part No.:
IKW50N65RH5XKSA1
Manufacturer:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Maximum Continuous Collector Current

50 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

15V

Maximum Power Dissipation

305 W

Number of Transistors

2

Package Type

PG-TO247-3

Configuration

Single

The Infineon TRENCHSTOP5 H5 IGBT co-packed with half-rated 6th generation CoolSiCTM schottky barrier diode. Ultra-low switching losses due to the combination of TRENCHSTOPTM5 and CoolSiCTM technology. Benchmark efficiency in hard switching topologies. Plug-and-play replacement of pure silicon devices. Maximum junction temperature is 175°C

Industrial Power Supplies
Industrial SMPS
Energy Generation
Solar String Inverter
Energy Distribution - Energy Storage
Infrastructure Charge - Charger

For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.


Related links