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Select all	Attribute	Value
	Brand	onsemi
	Product Type	IGBT
	Maximum Collector Emitter Voltage Vceo	1200V
	Maximum Power Dissipation Pd	153W
	Package Type	TO-247
	Mount Type	Surface
	Pin Count	4
	Maximum Gate Emitter Voltage VGEO	20 V
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	175°C
	Series	FGH4L40T120LQD
	Standards/Approvals	RoHS
	Length	15.8mm
	Height	5.2mm
	Width	22.7 mm
	Automotive Standard	No

	Select all
	Brand onsemi
	Product Type IGBT
	Maximum Collector Emitter Voltage Vceo 1200V
	Maximum Power Dissipation Pd 153W
	Package Type TO-247
	Mount Type Surface
	Pin Count 4
	Maximum Gate Emitter Voltage VGEO 20 V
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 175°C
	Series FGH4L40T120LQD
	Standards/Approvals RoHS
	Length 15.8mm
	Height 5.2mm
	Width 22.7 mm
	Automotive Standard No

Datasheet - FGH4L40T120LQD

The ON Semiconductor 1200 V, 40 A ultra field stop IGBT. This IGBT uses a fast switching co-packed diode making it ideal for use in hard-switching applications where EON, IRRM and trr are important factors determining the losses. Ultra Field Stop IGBTs offers excellent switching losses for low conduction loss devices.

Low VCE(SAT) 1.55V at 40A

EON 1.04mJ at 600V/40A

EOFF 1.35mJ at 600V/40A

IRRM 41.3A at 175C 1A/ns 40A

onsemi IGBT 1200 V, 4-Pin TO-247, Surface

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