Infineon IHW40N65R6XKSA1, Type N-Channel IGBT, 83 A 650 V, 3-Pin PG-TO-247, Surface
- RS Stock No.:
- 225-0574
- Mfr. Part No.:
- IHW40N65R6XKSA1
- Manufacturer:
- Infineon
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 pack of 5 units)*
HK$124.60
FREE delivery for orders over HK$250.00
In Stock
- Plus 20 unit(s) shipping from 20 April 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 5 | HK$24.92 | HK$124.60 |
| 10 - 95 | HK$24.48 | HK$122.40 |
| 100 - 245 | HK$24.04 | HK$120.20 |
| 250 - 495 | HK$23.60 | HK$118.00 |
| 500 + | HK$23.18 | HK$115.90 |
*price indicative
- RS Stock No.:
- 225-0574
- Mfr. Part No.:
- IHW40N65R6XKSA1
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Maximum Continuous Collector Current Ic | 83A | |
| Product Type | IGBT | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Maximum Power Dissipation Pd | 210W | |
| Package Type | PG-TO-247 | |
| Mount Type | Surface | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Minimum Operating Temperature | -40°C | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.6V | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Series | TrenchStop | |
| Length | 16.3mm | |
| Height | 5.3mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Maximum Continuous Collector Current Ic 83A | ||
Product Type IGBT | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Maximum Power Dissipation Pd 210W | ||
Package Type PG-TO-247 | ||
Mount Type Surface | ||
Channel Type Type N | ||
Pin Count 3 | ||
Minimum Operating Temperature -40°C | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.6V | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Operating Temperature 175°C | ||
Series TrenchStop | ||
Length 16.3mm | ||
Height 5.3mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon IHW40N65R6 is the 650 V, 40 A IGBT with monolithically integrated diode in TO-247 package with monolithically integrated diode is designed to fulfil demanding requirements of induction heating applications using half-bridge resonant topology.
Frequency range 20-75 kHz
Low EMI
Very tight parameter distribution
Maximum operating TJ of 175 °C
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