Infineon IGB50N65H5ATMA1, Type N-Channel IGBT, 50 A 650 V, 3-Pin TO-263, Surface
- RS Stock No.:
- 218-4390
- Mfr. Part No.:
- IGB50N65H5ATMA1
- Manufacturer:
- Infineon
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Subtotal (1 pack of 5 units)*
HK$136.30
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Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 245 | HK$27.26 | HK$136.30 |
| 250 - 495 | HK$26.58 | HK$132.90 |
| 500 + | HK$26.18 | HK$130.90 |
*price indicative
- RS Stock No.:
- 218-4390
- Mfr. Part No.:
- IGB50N65H5ATMA1
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | IGBT | |
| Maximum Continuous Collector Current Ic | 50A | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Maximum Power Dissipation Pd | 270W | |
| Number of Transistors | 1 | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.65V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Gate Emitter Voltage VGEO | ±20 ±30 V | |
| Maximum Operating Temperature | 175°C | |
| Length | 10.31mm | |
| Series | High Speed Fifth Generation | |
| Height | 4.57mm | |
| Standards/Approvals | JEDEC47/20/22 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type IGBT | ||
Maximum Continuous Collector Current Ic 50A | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Maximum Power Dissipation Pd 270W | ||
Number of Transistors 1 | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Channel Type Type N | ||
Pin Count 3 | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.65V | ||
Minimum Operating Temperature -40°C | ||
Maximum Gate Emitter Voltage VGEO ±20 ±30 V | ||
Maximum Operating Temperature 175°C | ||
Length 10.31mm | ||
Series High Speed Fifth Generation | ||
Height 4.57mm | ||
Standards/Approvals JEDEC47/20/22 | ||
Automotive Standard No | ||
The Infineon TRENCHSTOP IGBT5 technology redefines best-in-class IGBT resulting in lower junction and case temperature leading to higher device reliability by providing unmatched performance in terms of efficiency for hard switching applications. It has collector emitter voltage of 650 V and collector current of 80 A.
Higher power density design
50V increase in the bus voltage possible without compromising reliability
Mild positive temperature coefficient