Infineon IKD15N60RATMA1 IGBT, 30 A 600 V, 3-Pin PG-TO252-3
- RS Stock No.:
- 215-6656
- Mfr. Part No.:
- IKD15N60RATMA1
- Manufacturer:
- Infineon
Bulk discount available
Subtotal (1 reel of 2500 units)*
HK$13,410.00
FREE delivery for orders over HK$250.00
In Stock
- 2,500 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 2500 - 10000 | HK$5.364 | HK$13,410.00 |
| 12500 + | HK$5.257 | HK$13,142.50 |
*price indicative
- RS Stock No.:
- 215-6656
- Mfr. Part No.:
- IKD15N60RATMA1
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Maximum Continuous Collector Current | 30 A | |
| Maximum Collector Emitter Voltage | 600 V | |
| Maximum Gate Emitter Voltage | ±20V | |
| Maximum Power Dissipation | 250 W | |
| Package Type | PG-TO252-3 | |
| Pin Count | 3 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Maximum Continuous Collector Current 30 A | ||
Maximum Collector Emitter Voltage 600 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Maximum Power Dissipation 250 W | ||
Package Type PG-TO252-3 | ||
Pin Count 3 | ||
The Infineon insulated-gate bipolar transistor with integrated diode in packages offering space saving advantage.
High Efficiency
Low Switching Losses
Increased Reliability
Low Electromagnetic Interference
Related links
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