Infineon IHW20N135R5XKSA1 IGBT, 40 A 1350 V, 3-Pin PG-TO247-3

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Subtotal (1 tube of 30 units)*

HK$425.10

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Units
Per unit
Per Tube*
30 - 60HK$14.17HK$425.10
90 - 120HK$13.60HK$408.00
150 +HK$13.25HK$397.50

*price indicative

RS Stock No.:
215-6635
Mfr. Part No.:
IHW20N135R5XKSA1
Manufacturer:
Infineon
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Brand

Infineon

Maximum Continuous Collector Current

40 A

Maximum Collector Emitter Voltage

1350 V

Maximum Gate Emitter Voltage

±20 V, ±25 V

Maximum Power Dissipation

310 W

Package Type

PG-TO247-3

Pin Count

3

The Infineon reverse conducting insulated-gate bipolar transistor with monolithic body diode offers high breakdown voltage of 1350v.

High Efficiency
Low Switching Losses
Increased Reliability
Low Electromagnetic Interference

For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.


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