ON Semiconductor, FGAF40S65AQ

Product overview and Technical data sheets
Legislation and Compliance
Non Compliant
COO (Country of Origin): KR
Product Details

Using novel field stop IGBT technology, ON semiconductor’s new series of field stop 4th generation of RC IGBTs offer the optimum performance for converter PFC stage of consummer and industrial applications.

Maximum junction temperature : TJ = 175°C
Positive temperaure co-efficient for easy parallel operating
High current capability
Low saturation voltage: VCE(sat) = 1.6V(Typ.) @ IC = 40A
High input impedance
100% of the Parts tested for ILM
Fast switching
Tightened parameter distribution
IGBT with monolithic reverse conducting diode
Applications
Consumer Appliances
PFC, Welder
Industrial application

Specifications
Attribute Value
Maximum Continuous Collector Current 80 A
Maximum Collector Emitter Voltage 650 V
Maximum Gate Emitter Voltage ±20V
Maximum Power Dissipation 94 W
Number of Transistors 1
Package Type TO-3PF
Mounting Type Through Hole
Channel Type N
Pin Count 3
Transistor Configuration Single
Length 15.7mm
Width 5.7mm
Height 24.7mm
Dimensions 15.7 x 5.7 x 24.7mm
Energy Rating 325µJ
Gate Capacitance 2590pF
Maximum Operating Temperature +175 °C
Minimum Operating Temperature -55 °C
360 In stock for delivery within 3 working days
Price Each (In a Pack of 3)
HK$ 26.03
(exc. GST)
units
Per unit
Per Pack*
3 - 27
HK$26.03
HK$78.09
30 - 297
HK$22.087
HK$66.261
300 - 747
HK$19.23
HK$57.69
750 - 1497
HK$18.267
HK$54.801
1500 +
HK$16.253
HK$48.759
*price indicative
Packaging Options:
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