ON Semiconductor, AFGB40T65SQDN

Product overview and Technical data sheets
Legislation and Compliance
Non Compliant
COO (Country of Origin): CN
Product Details

Using the novel field stop 4th generation IGBT technology. AFGB40T65SQDN offers the optimum performance with both low conduction loss and switching loss for a high efficiency operation in various applications.

VCE(sat) = 1.6 V (typ.) @ IC = 40 A
Low VF soft recovery co-packaged diode
For automotive
Low conduction loss
Low noise and conduction loss
Applications
Automotive On Board Charge
Automotive DC/DC converter for HEV
End Products
EV/PHEV

Specifications
Attribute Value
Maximum Continuous Collector Current 80 A
Maximum Collector Emitter Voltage 650 V
Maximum Gate Emitter Voltage ±20V
Maximum Power Dissipation 238 W
Number of Transistors 1
Package Type D2PAK
Mounting Type Surface Mount
Channel Type N
Pin Count 3
Transistor Configuration Single
Length 10.67mm
Width 9.65mm
Height 4.58mm
Dimensions 10.67 x 9.65 x 4.58mm
Automotive Standard AEC-Q101
Energy Rating 22.3µJ
Minimum Operating Temperature -55 °C
Maximum Operating Temperature +175 °C
Gate Capacitance 2495pF
614 In stock for delivery within 3 working days
Price Each (In a Pack of 2)
HK$ 36.21
(exc. GST)
units
Per unit
Per Pack*
2 - 18
HK$36.21
HK$72.42
20 - 198
HK$30.72
HK$61.44
200 - 498
HK$26.675
HK$53.35
500 - 998
HK$25.225
HK$50.45
1000 +
HK$22.69
HK$45.38
*price indicative
Packaging Options:
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