onsemi FGH60T65SQD-F155, P-Channel IGBT, 60 A 650 V, 3-Pin TO-247 G03, Through Hole

Using novel field stop IGBT technology, ON semiconductor’s new series of field stop 4th generation IGBTs offer the optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential.

Maximum Junction Temperature: TJ =175°C
Positive Temperature Co-efficient for Easy Parallel Operating
High Current Capability
Low Saturation Voltage: VCE(sat) =1.6 V(Typ.) @ IC = 60 A
High Input Impedance
Fast Switching
Tighten Parameter Distribution
Applications
Solar Inverter, UPS, Welder, Telecom, ESS, PFC

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