ROHM RGT30NS65DGC9, P-Channel IGBT, 30 A 650 V, 3+Tab-Pin I2PAK, Through Hole
- RS Stock No.:
- 171-5593
- Mfr. Part No.:
- RGT30NS65DGC9
- Manufacturer:
- ROHM
205 In stock for delivery within 3 working days
Added
Price Each (In a Pack of 5)
HK$23.45
| Units | Per unit | Per Pack* |
| 5 - 45 | HK$23.45 | HK$117.25 |
| 50 - 95 | HK$22.866 | HK$114.33 |
| 100 - 245 | HK$22.296 | HK$111.48 |
| 250 - 495 | HK$21.738 | HK$108.69 |
| 500 + | HK$21.194 | HK$105.97 |
| *price indicative | ||
- RS Stock No.:
- 171-5593
- Mfr. Part No.:
- RGT30NS65DGC9
- Manufacturer:
- ROHM
Legislation and Compliance
- COO (Country of Origin):
- JP
Product Details
ROHM's IGBT products will contribute to energy saving high efficiency and a wide range of high voltage and high-current applications.
Low Collector - Emitter Saturation Voltage
Low Switching Loss
Short Circuit Withstand Time 5us
Built in Very Fast & Soft Recovery FRD (RFN - Series)
Pb - free Lead Plating
Low Switching Loss
Short Circuit Withstand Time 5us
Built in Very Fast & Soft Recovery FRD (RFN - Series)
Pb - free Lead Plating
Specifications
Attribute | Value |
|---|---|
| Maximum Continuous Collector Current | 30 A |
| Maximum Collector Emitter Voltage | 650 V |
| Maximum Gate Emitter Voltage | 30V |
| Maximum Power Dissipation | 133 W |
| Number of Transistors | 1 |
| Package Type | TO-262 |
| Mounting Type | Through Hole |
| Channel Type | P |
| Pin Count | 3+Tab |
| Transistor Configuration | Single |
| Dimensions | 10.1 x 4.5 x 9mm |
| Gate Capacitance | 780pF |
| Maximum Operating Temperature | +175 °C |
| Minimum Operating Temperature | -40 °C |