ROHM RGT30NS65DGC9, P-Channel IGBT, 30 A 650 V, 3+Tab-Pin I2PAK, Through Hole

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HK$83.40

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Per Pack*
5 - 45HK$16.68HK$83.40
50 - 95HK$16.26HK$81.30
100 - 245HK$15.84HK$79.20
250 - 495HK$15.44HK$77.20
500 +HK$15.08HK$75.40

*price indicative

RS Stock No.:
171-5593
Mfr. Part No.:
RGT30NS65DGC9
Manufacturer:
ROHM
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Brand

ROHM

Maximum Continuous Collector Current

30 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

30V

Maximum Power Dissipation

133 W

Number of Transistors

1

Package Type

TO-262

Mounting Type

Through Hole

Channel Type

P

Pin Count

3+Tab

Transistor Configuration

Single

Dimensions

10.1 x 4.5 x 9mm

Minimum Operating Temperature

-40 °C

Gate Capacitance

780pF

Maximum Operating Temperature

+175 °C

COO (Country of Origin):
JP
ROHM's IGBT products will contribute to energy saving high efficiency and a wide range of high voltage and high-current applications.

Low Collector - Emitter Saturation Voltage
Low Switching Loss
Short Circuit Withstand Time 5us
Built in Very Fast & Soft Recovery FRD (RFN - Series)
Pb - free Lead Plating

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