STMicroelectronics, Type N-Channel IGBT, 80 A 650 V, 3-Pin TO-3P, Through Hole

The image is for reference only, please refer to product details and specifications

View all IGBTs
Bulk discount available

Subtotal (1 tube of 30 units)*

HK$1,002.51

Add to Basket
Select or type quantity
Temporarily out of stock
  • Shipping from 06 July 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Tube*
30 - 120HK$33.417HK$1,002.51
150 +HK$32.747HK$982.41

*price indicative

RS Stock No.:
168-8686
Mfr. Part No.:
STGWT60H65DFB
Manufacturer:
STMicroelectronics
Find similar products by selecting one or more attributes.
Select all

Brand

STMicroelectronics

Product Type

IGBT

Maximum Continuous Collector Current Ic

80A

Maximum Collector Emitter Voltage Vceo

650V

Maximum Power Dissipation Pd

375W

Package Type

TO-3P

Mount Type

Through Hole

Channel Type

Type N

Pin Count

3

Switching Speed

1MHz

Maximum Collector Emitter Saturation Voltage VceSAT

2V

Maximum Gate Emitter Voltage VGEO

±20 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Series

HB

Standards/Approvals

RoHS

Automotive Standard

No

COO (Country of Origin):
KR

IGBT Discretes, STMicroelectronics


IGBT Discretes & Modules, STMicroelectronics


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Related links