Toshiba GT50JR22 IGBT, 50 A 600 V, 3-Pin TO-3P

  • RS Stock No. 168-7768
  • Mfr. Part No. GT50JR22
  • Manufacturer Toshiba
Product overview and Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
COO (Country of Origin): JP
Product Details

IGBT Discretes, Toshiba

IGBT Discretes & Modules, Toshiba

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Specifications
Attribute Value
Maximum Continuous Collector Current 50 A
Maximum Collector Emitter Voltage 600 V
Maximum Gate Emitter Voltage ±25V
Maximum Power Dissipation 230 W
Package Type TO-3P
Mounting Type Through Hole
Channel Type N
Pin Count 3
Switching Speed 1MHz
Transistor Configuration Single
Length 15.5mm
Width 4.5mm
Height 20mm
Dimensions 15.5 x 4.5 x 20mm
Maximum Operating Temperature +175 °C
275 In stock for delivery within 3 working days
Price Each (In a Tube of 25)
Was HK$37.76
HK$ 30.143
(exc. GST)
units
Per unit
Per Tube*
25 +
HK$30.143
HK$753.575
*price indicative
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