- RS Stock No.:
- 168-7722
- Mfr. Part No.:
- STGF6NC60HD
- Manufacturer:
- STMicroelectronics
On back order for despatch 31/03/2025, delivery within 3 working days
Added
Price Each (In a Tube of 50)
HK$10.068
Units | Per unit | Per Tube* |
50 - 50 | HK$10.068 | HK$503.40 |
100 - 150 | HK$9.849 | HK$492.45 |
200 + | HK$9.63 | HK$481.50 |
*price indicative |
- RS Stock No.:
- 168-7722
- Mfr. Part No.:
- STGF6NC60HD
- Manufacturer:
- STMicroelectronics
Legislation and Compliance
- COO (Country of Origin):
- CN
Product Details
IGBT Discretes, STMicroelectronics
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specifications
Attribute | Value |
---|---|
Maximum Continuous Collector Current | 6 A |
Maximum Collector Emitter Voltage | 600 V |
Maximum Gate Emitter Voltage | ±20V |
Maximum Power Dissipation | 20 W |
Package Type | TO-220FP |
Mounting Type | Through Hole |
Channel Type | N |
Pin Count | 3 |
Switching Speed | 1MHz |
Transistor Configuration | Single |
Dimensions | 10.4 x 4.6 x 16.4mm |
Minimum Operating Temperature | -55 °C |
Maximum Operating Temperature | +150 °C |