STMicroelectronics STGW60H65DFB IGBT, 80 A 650 V, 3-Pin TO-247, Through Hole
- RS Stock No.:
- 168-7096
- Mfr. Part No.:
- STGW60H65DFB
- Manufacturer:
- STMicroelectronics
On back order for despatch 05/05/2025, delivery within 3 working days
Added
Price Each (In a Tube of 30)
HK$37.44
| Units | Per unit | Per Tube* |
| 30 - 30 | HK$37.44 | HK$1,123.20 |
| 60 - 90 | HK$36.626 | HK$1,098.78 |
| 120 + | HK$35.813 | HK$1,074.39 |
| *price indicative | ||
- RS Stock No.:
- 168-7096
- Mfr. Part No.:
- STGW60H65DFB
- Manufacturer:
- STMicroelectronics
Product overview and Technical data sheets
Legislation and Compliance
- COO (Country of Origin):
- CN
Product Details
IGBT Discretes, STMicroelectronics
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specifications
Attribute | Value |
|---|---|
| Maximum Continuous Collector Current | 80 A |
| Maximum Collector Emitter Voltage | 650 V |
| Maximum Gate Emitter Voltage | ±20V |
| Maximum Power Dissipation | 375 W |
| Package Type | TO-247 |
| Mounting Type | Through Hole |
| Channel Type | N |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Dimensions | 15.75 x 5.15 x 20.15mm |
| Maximum Operating Temperature | +175 °C |
| Minimum Operating Temperature | -55 °C |