STMicroelectronics, Type N-Channel IGBT, 80 A 600 V, 3-Pin TO-247, Through Hole

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Subtotal (1 tube of 30 units)*

HK$1,046.91

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Units
Per unit
Per Tube*
30 - 30HK$34.897HK$1,046.91
60 - 90HK$34.14HK$1,024.20
120 +HK$33.377HK$1,001.31

*price indicative

RS Stock No.:
168-7008
Mfr. Part No.:
STGW60V60F
Manufacturer:
STMicroelectronics
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Brand

STMicroelectronics

Maximum Continuous Collector Current Ic

80A

Product Type

IGBT

Maximum Collector Emitter Voltage Vceo

600V

Maximum Power Dissipation Pd

375W

Package Type

TO-247

Mount Type

Through Hole

Channel Type

Type N

Pin Count

3

Switching Speed

1MHz

Minimum Operating Temperature

-55°C

Maximum Gate Emitter Voltage VGEO

±20 V

Maximum Collector Emitter Saturation Voltage VceSAT

2.3V

Maximum Operating Temperature

175°C

Length

14.8mm

Series

V

Standards/Approvals

ECOPACK

Width

15.75 mm

Height

20.15mm

Automotive Standard

No

COO (Country of Origin):
CN

IGBT Discretes, STMicroelectronics


IGBT Discretes & Modules, STMicroelectronics


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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