IXYS IXYX100N120C3 IGBT, 188 A 1200 V, 3-Pin PLUS247

  • RS Stock No. 168-4771
  • Mfr. Part No. IXYX100N120C3
  • Manufacturer IXYS
Product overview and Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
COO (Country of Origin): US
Product Details

IGBT Discretes, IXYS XPT series

The XPT™ range of discrete IGBTs from IXYS feature Extreme-light Punch-Through thin wafer technology, resulting in reduced thermal resistance and lower energy losses. These devices offer fast switching times with low tail current, and are available in a variety of industry standard and proprietary packages.

High power density and low VCE(sat)
Square Reverse Bias Safe Operating Areas (RBSOA) up to rated breakdown voltage
Short circuit capability for 10usec
Positive on-state voltage temperature coefficient
Optional co-packed Sonic-FRD™ or HiPerFRED™ diodes
International standard and proprietary high voltage packages

IGBT Discretes & Modules, IXYS

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Specifications
Attribute Value
Maximum Continuous Collector Current 188 A
Maximum Collector Emitter Voltage 1200 V
Maximum Gate Emitter Voltage ±20V
Maximum Power Dissipation 1.15 kW
Package Type PLUS247
Mounting Type Through Hole
Channel Type N
Pin Count 3
Switching Speed 50kHz
Transistor Configuration Single
Length 16.13mm
Width 5.21mm
Height 21.34mm
Dimensions 16.13 x 5.21 x 21.34mm
Maximum Operating Temperature +175 °C
Minimum Operating Temperature -55 °C
60 In stock for delivery within 3 working days
Price Each (In a Tube of 30)
HK$ 175.526
(exc. GST)
units
Per unit
Per Tube*
30 +
HK$175.526
HK$5,265.78
*price indicative
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