Fuji Electric FGW30N120HD IGBT, 30 A 1200 V, 3-Pin TO-247

  • RS Stock No. 168-4689
  • Mfr. Part No. FGW30N120HD
  • Manufacturer Fuji Electric
Product overview and Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
COO (Country of Origin): JP
Product Details

IGBT Discretes, Fuji Electric

IGBT Discretes & Modules, Fuji Electric

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Specifications
Attribute Value
Maximum Continuous Collector Current 30 A
Maximum Collector Emitter Voltage 1200 V
Maximum Gate Emitter Voltage ±20V
Maximum Power Dissipation 260 W
Package Type TO-247
Mounting Type Through Hole
Channel Type N
Pin Count 3
Transistor Configuration Single
Length 15.9mm
Width 5.03mm
Height 20.95mm
Dimensions 15.9 x 5.03 x 20.95mm
Maximum Operating Temperature +175 °C
Minimum Operating Temperature -40 °C
Temporarily out of stock - back order for despatch when stock is available
Price Each (In a Tube of 30)
HK$ 74.693
(exc. GST)
units
Per unit
Per Tube*
30 +
HK$74.693
HK$2,240.79
*price indicative
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