Discrete IGBTs, 1000V and over, Fairchild Semiconductor
The ON Semiconductor FGH30S130P is a 1300V, 30A IGBT featuring shorted-anode and field stop trench technologies. Soft switching applications are ideal for the FGH30S130P, with efficient conduction and high switching performance characteristics. The FGH30S130P IGBT can work in a parallel configuration and offers great avalanche capabilities. The FGH30S130P IGBT is designed for use in induction heating, microwave ovens and other household appliances.
TO-247 package High speed switching Superior conduction Low saturation voltage High input impedance
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.