STMicroelectronics STGD5NB120SZT4 IGBT, 10 A 1200 V, 3-Pin DPAK (TO-252), Surface Mount
- RS Stock No.:
- 165-5304
- Mfr. Part No.:
- STGD5NB120SZT4
- Manufacturer:
- STMicroelectronics
On back order for despatch 31/05/2024, delivery within 3 working days
Added
Price Each (On a Reel of 2500)
HK$9.799
| Units | Per unit | Per Reel* |
| 2500 - 10000 | HK$9.799 | HK$24,497.50 |
| 12500 + | HK$9.603 | HK$24,007.50 |
| *price indicative | ||
- RS Stock No.:
- 165-5304
- Mfr. Part No.:
- STGD5NB120SZT4
- Manufacturer:
- STMicroelectronics
Product overview and Technical data sheets
Legislation and Compliance
- COO (Country of Origin):
- CN
Product Details
IGBT Discretes, STMicroelectronics
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specifications
Attribute | Value |
|---|---|
| Maximum Continuous Collector Current | 10 A |
| Maximum Collector Emitter Voltage | 1200 V |
| Maximum Gate Emitter Voltage | ±20V |
| Maximum Power Dissipation | 75 W |
| Package Type | DPAK (TO-252) |
| Mounting Type | Surface Mount |
| Channel Type | N |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Dimensions | 6.6 x 6.2 x 2.4mm |
| Gate Capacitance | 430pF |
| Energy Rating | 12.68mJ |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -55 °C |