ON Semiconductor NGTB30N120IHRWG IGBT, 60 A 1200 V, 3-Pin TO-247

Product overview and Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
COO (Country of Origin): CN
Product Details

IGBT Discretes, ON Semiconductor

Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications.

IGBT Discretes, ON Semiconductor

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Specifications
Attribute Value
Maximum Continuous Collector Current 60 A
Maximum Collector Emitter Voltage 1200 V
Maximum Gate Emitter Voltage ±20V
Maximum Power Dissipation 384 W
Package Type TO-247
Mounting Type Through Hole
Channel Type N
Pin Count 3
Switching Speed 1MHz
Transistor Configuration Single
Length 16.25mm
Width 5.3mm
Height 21.4mm
Dimensions 16.25 x 5.3 x 21.4mm
Maximum Operating Temperature +175 °C
Minimum Operating Temperature -40 °C
30 In stock for delivery within 3 working days
Price Each (In a Tube of 30)
HK$ 27.914
(exc. GST)
units
Per unit
Per Tube*
30 +
HK$27.914
HK$837.42
*price indicative
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