Infineon IKQ50N120CH3XKSA1 P-Channel IGBT, 100 A 1200 V, 3-Pin TO-247

  • RS Stock No. 162-3328
  • Mfr. Part No. IKQ50N120CH3XKSA1
  • Manufacturer Infineon
Product overview and Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
Product Details

Responding to the market requirement to accommodate ever increasing amounts of silicon in smaller, space saving packages, Infineon introduces the new package TO-247PLUS for 1200V IGBT. Higher current capability, improved thermal behaviour. The TO-247PLUS has the same outer dimensions as the industry standard TO-247, but due to the absence of the screw hole, allows up to 75A in 1200V co-packed with full rated 75A diode.

High power density – up to 75 A 1200 V IGBT co-packed with 75 A diode in TO-247 footprint
20% lower R th(jh) compared to TO-247 3 pin
Extended collector-emitter pin creepage of 4.25 mm
Extended clip creepage due to fully encapsulated front side of the package
Higher system power density – I c increase keeping the same system thermal performance
Lower thermal resistance R th(jh) and improved by ∼15% heat dissipation capability of TO-247PLUS vs TO-247
Higher reliability, extended lifetime of the device

Specifications
Attribute Value
Maximum Continuous Collector Current 100 A
Maximum Collector Emitter Voltage 1200 V
Maximum Gate Emitter Voltage ±30V
Number of Transistors 1
Maximum Power Dissipation 652 W
Package Type TO-247
Mounting Type Through Hole
Channel Type P
Pin Count 3
Switching Speed 60kHz
Transistor Configuration Single
Length 15.9mm
Width 5.1mm
Height 21.1mm
Dimensions 15.9 x 5.1 x 21.1mm
Minimum Operating Temperature -40 °C
Maximum Operating Temperature +175 °C
Energy Rating 4.9
Gate Capacitance 3269pF
346 In stock for delivery within 3 working days
Price Each
HK$ 106.85
(exc. GST)
units
Per unit
1 - 9
HK$106.85
10 - 19
HK$98.43
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HK$91.16
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