IXYS IXGP20N120B3 IGBT, 80 A 1200 V, 3-Pin TO-220

  • RS Stock No. 146-1730
  • Mfr. Part No. IXGP20N120B3
  • Manufacturer IXYS
Product overview and Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
COO (Country of Origin): US
Product Details

IGBT Discretes, IXYS

IGBT Discretes & Modules, IXYS

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Specifications
Attribute Value
Maximum Continuous Collector Current 80 A
Maximum Collector Emitter Voltage 1200 V
Maximum Gate Emitter Voltage ±20V
Maximum Power Dissipation 180 W
Package Type TO-220
Mounting Type Through Hole
Channel Type N
Pin Count 3
Switching Speed 20kHz
Transistor Configuration Single
Length 10.66mm
Width 4.83mm
Height 16mm
Dimensions 10.66 x 4.83 x 16mm
Maximum Operating Temperature +150 °C
Minimum Operating Temperature -55 °C
50 In stock for delivery within 3 working days
Price Each (In a Tube of 50)
HK$ 26.936
(exc. GST)
units
Per unit
Per Tube*
50 +
HK$26.936
HK$1,346.80
*price indicative
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